Slip Ring Test Assembly With Increased Breakdown Voltage Limit for High-Voltage Bus Satellites

Breakdown Voltage of High-voltage GaN FETs

GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...

Breakdown behaviour of high-voltage GaN-HEMTs

Low power high-speed multithreshold voltage CMOS bus architectures

Low power, high-speed bus architectures, based on low swing voltage technique, using multithreshold voltage transistors are proposed in this paper. Three different classes of driver/repeater/receiver circuits are introduced. The driver circuits are comprised of high threshold voltage MOSFET transistors, in order to reduce their output swing level voltage. For re-pulling up the low swing voltage...

An Innovative Simple Test Circuit for Single-Phase Short Circuit Making Test of High-Voltage Switching Devices

Nowadays, high-voltage circuit breakers have reached such high short-circuit capabilities that testing them under the full rated voltage is generally not possible with direct tests, and they are conducted by using the synthetic test methods. Although the phenomena associated with making tests is of particular importance especially in case of load break switches, but making tests are rather d...

Development of High Breakdown Voltage InGaP/GaAs DHBTs

In this paper, we report the development of a high breakdown voltage InGaP/GaAs HBT process for low-to-mid power and high-voltage power amplifier operation. To achieve the high-breakdown InGaP HBT, two different collector designs and collector-etch processes were investigated. The first device process approach uses a thick GaAs collector with low n doping. The process challenges and considerati...